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silicon capacitor launchip LHC204SA2K0047SWAX featuring silicon dioxide and silicon nitride dielectric materials

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silicon capacitor launchip LHC204SA2K0047SWAX featuring silicon dioxide and silicon nitride dielectric materials

operating temperature : -55℃~+150℃

Tolerance : ±10%

Voltage - Breakdown : 4V

Capacitance : 200nF

Description : ±10% 4V 200nF 0201 Silicon Capacitors RoHS

Mfr. Part # : LHC204SA2K0047SWAX

Model Number : LHC204SA2K0047SWAX

Package : 0201

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Product Overview

Silicon capacitors are fabricated using semiconductor chip manufacturing processes with silicon as the substrate and thin film materials like silicon dioxide/silicon nitride as the dielectric. Compared to ceramic capacitors (MLCC), they offer advantages such as small size, thin profile, low impedance, high frequency with low insertion loss, high temperature stability, and high reliability. Silicon capacitors are commonly used for DC isolation, RF bypassing, or as fixed capacitive tuning elements in filters, oscillators, and matching networks. They find broad applications in aerospace, defense, energy, communications, automation, and medical fields. Shanghai Langxi Technology Co., Ltd., headquartered in Anting Town, Jiading District, Shanghai, is committed to becoming a leading high-tech enterprise in high-end electronic components. Anting serves as their R&D, testing, and certification center, boasting independent laboratories with advanced equipment and an experienced R&D team, offering a variety of silicon capacitor series products in both surface mount and top/bottom electrode types.

Product Attributes

  • Brand: (Shanghai Langxi Technology Co., Ltd.)
  • Origin: Shanghai, China
  • Material: Silicon substrate, Silicon dioxide/Silicon nitride dielectric
  • Electrode Material: Surface gold electrode (for gold wire bonding), Ni/Au, Ni/SnAgCu (SAC305), Cu, Al, NiPdAu
  • Certifications: Not specified in the provided text.
  • Color: Not specified in the provided text.

Technical Specifications

Product SeriesCapacitance RangeWorking Voltage (V)Dielectric Strength (V)Max Operating FrequencyOperating Temperature (C)Mounting TypeKey Features/Target ModelsTypical Thickness (m)
High Capacitance (HC)0.2nF~1F0.7~104~306GHz-55~150Surface MountCapacitance density 2F/mm, world-leading; 01005L~0402L series100
High Frequency (HF)0.8pF~1nF10025026.5GHz-55~150Top/Bottom ElectrodeTargeting Skyworks SC*/Murata UW* series; Silicon capacitor thickness 100m100
Ultra-High Frequency (SF/XF)10nF~130nF2.5~1011~3067GHz-55~150Surface MountTargeting Murata XBSC series; 0201/0201L/0402L series100
High Voltage (HV/EV)15pF~1000pF150~3600375~900026.5GHz-55~150Top/Bottom ElectrodeTargeting ATC100A/B/C/E series100 (typical), up to 300 for some models

2507161725_launchip-LHC204SA2K0047SWAX_C49352912.pdf


Quality silicon capacitor launchip LHC204SA2K0047SWAX featuring silicon dioxide and silicon nitride dielectric materials for sale

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