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EMI5208MUTAG onsemi EMI filter array with 8 channels 250 MHz cutoff frequency and Pb free UDFN package

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EMI5208MUTAG onsemi EMI filter array with 8 channels 250 MHz cutoff frequency and Pb free UDFN package

Attenuation Value : 20dB@800MHz~5GHz

Number of Channels : 8

Capacitance : 7pF

Operating Temperature : -40℃~+85℃

Filter Order : 2

Frequency - Cutoff or Center : 250MHz

ESD Protection : Yes

Description : 8 7pF 2 250MHz UFDFN-16-EP EMI/RFI Filters (LC, RC Networks) RoHS

Mfr. Part # : EMI5208MUTAG

Model Number : EMI5208MUTAG

Package : UFDFN-16-EP

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Product Overview

The EMI520xMU Series is a family of 4, 6, and 8-channel (C-R-C) Pi-style EMI filter arrays with integrated ESD protection. These devices are designed to minimize wireless interference in parallel interfaces operating at data rates up to 167 Mbps. With typical component values of R = 100 and C = 7 pF, they offer a cutoff frequency of 250 MHz and provide stop band attenuation greater than 20 dB from 800 MHz to 5.0 GHz, effectively mitigating interference from 2G/3G, GPS, Bluetooth, and WLAN signals. The integrated EMI/ESD solution in a low-profile UDFN package offers significant cost, system reliability, and space savings, making them ideal for applications such as EMI filtering for LCD and camera data lines, and protection for I/O ports and keypads.

Product Attributes

Brand: Semiconductor Components Industries, LLC (onsemi)
Package Type: UDFN (Ultra-Thin Dual Flat No-Lead)
Certifications: Pb-Free

Technical Specifications

Model	Channels	R Value	C Value	Cutoff Frequency (f3dB)	Stop Band Attenuation	ESD Protection (Contact Discharge)	Package Type	Package Dimensions (mm)	Lead Pitch (mm)	Data Rate (Max)
EMI5204MU	4	100	7 pF	250 MHz	> 20 dB (800 MHz - 5.0 GHz)	8.0 kV (IEC61000-4-2 Level 4)	UDFN8	1.7 x 1.35	0.4	167 Mbps
EMI5206MU	6	100	7 pF	250 MHz	> 20 dB (800 MHz - 5.0 GHz)	8.0 kV (IEC61000-4-2 Level 4)	UDFN12	2.5 x 1.35	0.4	167 Mbps
EMI5208MU	8	100	7 pF	250 MHz	> 20 dB (800 MHz - 5.0 GHz)	8.0 kV (IEC61000-4-2 Level 4)	UDFN16	3.3 x 1.35	0.4	167 Mbps
Electrical Characteristics
Maximum Reverse Working Voltage (VRWM)	5.0 V
Breakdown Voltage (VBR) (IR = 1.0 mA)	6.0 - 8.0 V
Leakage Current (IR) (VRWM = 3.3 V)	100 nA
Resistance (RA) (IR = 10 mA)	85 - 115 (Typical 100 )
Diode Capacitance (Cd) (VR = 2.5 V, f = 1.0 MHz)	7 - 11 pF (Typical 7 pF)
Line Capacitance (CL) (VR = 2.5 V, f = 1.0 MHz)	14 - 22 pF
Maximum Ratings
Operating Temperature Range	-40 to 85 C
Storage Temperature Range	-55 to 150 C

2410010231_onsemi-EMI5208MUTAG_C462987.pdf

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