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EMI7206MUTAG onsemi EMI filter designed to minimize interference in parallel interface applications

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EMI7206MUTAG onsemi EMI filter designed to minimize interference in parallel interface applications

Number of Channels : 6

Resistance : 10Ω

Inductance : 17nH

Operating Temperature : -40℃~+85℃

Capacitance : 12pF

Frequency - Cutoff or Center : 250MHz

ESD Protection : Yes

Description : 6 10Ω 17nH 12pF 250MHz UDFN-12-EP(1.2x2.5) EMI/RFI Filters (LC, RC Networks) RoHS

Mfr. Part # : EMI7206MUTAG

Model Number : EMI7206MUTAG

Package : UDFN-12-EP(1.2x2.5)

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Product Overview

The EMI720xMU Series is a family of LC EMI filters with integrated ESD protection, designed to minimize wireless interference in parallel interfaces. Featuring component values of L = 17 nH and C = 12 pF, these filters deliver a cutoff frequency of 250 MHz and provide stop band attenuation greater than -23 dB from 800 MHz to 6.0 GHz. This performance is ideal for applications with data rates up to 125 Mbps, effectively reducing interference from 2G/3G, GPS, Bluetooth, and WLAN signals. The series offers an integrated EMI/ESD system solution in a low-profile UDFN package, providing cost, system reliability, and space savings. Applications include wireless handsets, EMI filtering for LCD and camera data lines, and protection for I/O ports and keypads.

Product Attributes

Brand: Semiconductor Components Industries, LLC (onsemi)
ESD Protection: 16 kV ESD Protection on Each Channel (IEC61000-4-2 Level 4, Contact Discharge)
Package Type: UDFN (Ultra-Low-Profile Dual Flat No-Lead)
Certifications: PbFree Devices

Technical Specifications

Model	Number of Channels	Package Type	Package Dimensions (mm)	Lead Pitch (mm)	Inductance (L)	Capacitance (C)	3dB Cut-Off Frequency (f3dB)	Stop Band Attenuation (800 MHz to 6.0 GHz)	Max Data Rate	ESD Protection (IEC61000-4-2)
EMI7204MU	4	UDFN8	1.7 x 1.35	0.4	17 nH	12 pF	250 MHz	> -23 dB	Up to 125 Mbps	16 kV
EMI7206MU	6	UDFN12	2.5 x 1.35	0.4	17 nH	12 pF	250 MHz	> -23 dB	Up to 125 Mbps	16 kV
EMI7208MU	8	UDFN16	3.3 x 1.35	0.4	17 nH	12 pF	250 MHz	> -23 dB	Up to 125 Mbps	16 kV
Electrical Characteristics (Typical)
Inductance (L)	17 nH
Diode Capacitance (C1)	12 pF (VR = 2.5 V, f = 1.0 MHz, 30 mVAC)
Line Capacitance (Ct)	18.8 - 28.2 pF
3dB Cut-Off Frequency (f3dB)	250 MHz
Stop Band Attenuation	> 23 dB (800 MHz to 6.0 GHz)
Maximum reverse Working Voltage (VRWM)	5.0 V
Breakdown Voltage (VBR)	5.6 - 9.0 V (Positive Clamp), -1.5 - -0.04 V (Negative Clamp)
Leak Current (IR)	0.1 - 1.0 A (VRWM = 3.3 V)
Resistance (RA)	10
Current per inductor (IC)	30 mA
DC package power rating (Pp)	500 mW
Operating Temperature Range (TOP)	40 to 85 C
Storage Temperature (TSTG)	65 to 150 C

2410122121_onsemi-EMI7206MUTAG_C890610.pdf

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