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Wireless device EMI filtering and ESD protection solution onsemi NUF2230XV6T1G with SOT563 package

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Wireless device EMI filtering and ESD protection solution onsemi NUF2230XV6T1G with SOT563 package

Attenuation Value : 30dB@800MHz~900MHz

Number of Channels : 2

Resistance : 100Ω

Capacitance : 16pF

Operating Temperature : -40℃~+85℃

Filter Order : 2

Frequency - Cutoff or Center : 125MHz

ESD Protection : Yes

Description : 2 100Ω 16pF 2 125MHz SOT-563 EMI/RFI Filters (LC, RC Networks) RoHS

Mfr. Part # : NUF2230XV6T1G

Model Number : NUF2230XV6T1G

Package : SOT-563

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Product Overview

The NUF2230XV6 is a 2-line EMI filter array designed for wireless applications, offering both EMI filtering and ESD protection. It provides greater than -30 dB attenuation from 800 MHz to 900 MHz and clamps transients from static discharges, with ESD protection across all capacitors. This integrated solution reduces EMI/RFI emissions on data lines, offers cost and space savings in a SOT-563 package, minimizes parasitic inductances for an improved low-pass filter response, and enhances system reliability. It is suitable for EMI filtering and ESD protection of data lines in wireless phones, PDAs, handheld products, notebook computers, and LCD displays.

Product Attributes

Brand: Semiconductor Components Industries, LLC (onsemi)
Package: SOT-563
Moisture Sensitivity Level: 1
Compliance: IEC61000-4-2 (Level 4) > 8.0 kV (Contact)
ESD Ratings: Machine Model = C, Human Body Model = 3B
Lead Finish: PbFree Devices

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS
ESD Discharge (IEC61000-4-2 Air Discharge)	VPP			15		kV
ESD Discharge (IEC61000-4-2 Contact Discharge)	VPP			8.0		kV
Steady-State Power per Resistor	PR					mW
Steady-State Power per Package	PT					mW
Operating Temperature Range	TOP		-40		85	C
Storage Temperature Range	TSTG		-55		150	C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)	TL				260	C
ELECTRICAL CHARACTERISTICS
Maximum Reverse Working Voltage	VRWM			5.0		V
Breakdown Voltage	VBR	IR = 1.0 mA	6.0	7.0		V
Leakage Current	IR	VRWM = 3.0 V		1.0		µA
Resistance	RA	IR = 20 mA	90	100	110	Ω
Capacitance (Notes 1 and 2)	Cd	VR = 2.5 V, f = 1.0 MHz		16		pF
Cut-Off Frequency (Note 3)	f3dB	Above this frequency, appreciable attenuation occurs		125		MHz

Package Dimensions: SOT-563, 6 LEAD CASE 463A

Soldering Footprint

2410010302_onsemi-NUF2230XV6T1G_C133492.pdf

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