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Compact emi filter onsemi NUF6401MNT1G with pi style configuration providing wireless interference suppression

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Compact emi filter onsemi NUF6401MNT1G with pi style configuration providing wireless interference suppression

Description : DFN-12-EP(1.4x3) EMI/RFI Filters (LC, RC Networks) RoHS

Mfr. Part # : NUF6401MNT1G

Model Number : NUF6401MNT1G

Package : DFN-12-EP(1.4x3)

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Product Overview

The NUF6401MN and SNUF6401MN are six-channel (C-R-C) Pi-style EMI filter arrays with integrated ESD protection. Featuring typical component values of R = 100 and C = 17 pF, they deliver a cutoff frequency of 110 MHz and stop band attenuation greater than -30 dB from 800 MHz to 3.0 GHz. This performance is ideal for parallel interfaces with data rates up to 74 Mbps in applications requiring minimized wireless interference, effectively suppressing signals from 2G/3G, GPS, Bluetooth, and WLAN. Available in a low-profile 12-lead 1.35 mm x 3.0 mm DFN12 surface mount package, these devices offer an integrated EMI/ESD system solution for cost, reliability, and space savings. The 'S' prefix variant (SNUF6401) is intended for automotive and other applications with unique site and control change requirements, being AEC-Q101 qualified and PPAP capable.

Product Attributes

Brand: ON Semiconductor
Package Type: DFN12
Certifications: AEC-Q101 Qualified (SNUF6401 variant)
Material: Pb-Free Devices

Technical Specifications

Model	Description	R Value	C Value	f3dB Cut-Off Frequency	Stop Band Attenuation	ESD Protection	Package	Ordering Information
NUF6401MN	6-Channel EMI Filter with Integrated ESD Protection	100 (Typical)	17 pF (Typical)	110 MHz	> -30 dB from 800 MHz to 3.0 GHz	15 kV (IEC61000-4-2 Contact Discharge) per channel	DFN12 (1.35 mm x 3.0 mm)	NUF6401MNT1G (3000 / Tape & Reel)
SNUF6401MN	6-Channel EMI Filter with Integrated ESD Protection (Automotive)	100 (Typical)	17 pF (Typical)	110 MHz	> -30 dB from 800 MHz to 3.0 GHz	15 kV (IEC61000-4-2 Contact Discharge) per channel	DFN12 (1.35 mm x 3.0 mm)	SNUF6401MNT1G (3000 / Tape & Reel)
Electrical Characteristics (TJ = 25C unless otherwise noted)
Maximum Reverse Working Voltage (VRWM)	5.0 V
Breakdown Voltage (VBR) (IR = 1.0 mA)	6.0 - 7.0 V
Leakage Current (IR) (VRWM = 3.0 V)	100 - 1000 nA
Resistance (RA) (IR = 10 mA)	85 - 115 (Typ: 100 )
Diode Capacitance (Cd) (VR = 2.5 V, f = 1.0 MHz)	17 - 20 pF (Typ: 17 pF)
Line Capacitance (CL) (VR = 2.5 V, f = 1.0 MHz)	34 - 40 pF
6 dB Cut-Off Frequency (f6dB)	175 MHz

Applications

EMI Filtering for LCD and Camera Data Lines
EMI Filtering and Protection for I/O Ports and Keypads

2411220141_onsemi-NUF6401MNT1G_C353731.pdf

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