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CMOS oscillator MICROCHIP DSC1001DI1-0333333T featuring silicon MEMS technology and low frequency drift

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CMOS oscillator MICROCHIP DSC1001DI1-0333333T featuring silicon MEMS technology and low frequency drift

Current - Supply : 7.2mA

Operating Temperature : -40℃~+85℃

Output Type : CMOS

Voltage - Supply : 1.8V~3.3V

Frequency Stability : ±50ppm

Frequency : 33.3333MHz

Description : CMOS Programmable Oscillator 33.3333MHz 1.8V~3.3V SMD2520-4P

Mfr. Part # : DSC1001DI1-033.3333T

Model Number : DSC1001DI1-033.3333T

Package : SMD2520-4P

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Product Overview

The DSC1001/3/4 is a silicon MEMS-based CMOS oscillator family offering excellent jitter and stability over a wide range of supply voltages and temperatures. Its crystal-less design provides high reliability, making it suitable for rugged, industrial, and portable applications subjected to stress, shock, and vibration. Available in industry-standard packages, it offers a pin-for-pin "drop-in" replacement for standard crystal oscillators, enabling longer battery life and reduced power consumption.

Product Attributes

  • Brand: Microchip Technology Inc.
  • Certifications: Pb Free, RoHS, Reach SVHC Compliant, AEC-Q100 Reliability Qualified

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitsConditions
Frequency RangeF01150MHzSingle Frequency
f10ppmFrequency Tolerance (Initial, Temp, Voltage)
f20ppmFrequency Tolerance (Initial, Temp, Voltage)
f25ppmFrequency Tolerance (Initial, Temp, Voltage)
Agingf5ppm1 year @ +25C
Operating VoltageVDD1.73.6VRecommended Operating Conditions
Operating Temperature RangeTA40+105COrdering Option L
TA40+85COrdering Option I
TA20+70COrdering Option E
Standby CurrentIDD15AStandby, Max. @ T = +25C
Operating Current (1 MHz)IDD6.06.3mANo Load, CL = 0 pF, RL = , T = +25C, VDD = 1.8V
Output Startup TimetSU1.01.3msT = +25C
Output Disable TimetDA20100ns
Output Duty CycleSYM4555%
Input Logic Level HighVIH0.75 x VDDV
Input Logic Level LowVIL0.25 x VDDVVDD = 1.8V
Output Logic Level HighVOH0.8 x VDDV6 mA, DSC1004, CL = 40 pF
Output Logic Level LowVOL0.2 x VDDV6 mA, DSC1004, CL = 40 pF
Output Transition Rise TimetR1.43.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%
Output Transition Fall TimetF1.03.0nsDSC1001, CL = 15 pF, T = +25C, 20% to 80%
Max. Cycle-to-Cycle JitterJCC60psf = 100 MHz
Period JitterJP1015psRMSf = 100 MHz

2210180900_MICROCHIP-DSC1001DI1-033-3333T_C611723.pdf


Quality CMOS oscillator MICROCHIP DSC1001DI1-0333333T featuring silicon MEMS technology and low frequency drift for sale

CMOS oscillator MICROCHIP DSC1001DI1-0333333T featuring silicon MEMS technology and low frequency drift Images

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